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  • IRFU4105ZPBF

IRFU4105ZPBF

MOSFET N-CH 55V 30A I-PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFU4105ZPBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 347
  • Description: MOSFET N-CH 55V 30A I-PAK (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Vgs (Max) ±20V
Mount Through Hole
Fall Time (Typ) 24 ns
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Turn-Off Delay Time 26 ns
Number of Pins 3
Continuous Drain Current (ID) 30A
Transistor Element Material SILICON
Threshold Voltage 4V
Operating Temperature -55°C~175°C TJ
Gate to Source Voltage (Vgs) 20V
Packaging Tube
Published 2003
Drain-source On Resistance-Max 0.0245Ohm
Series HEXFET®
Drain to Source Breakdown Voltage 55V
JESD-609 Code e3
Pulsed Drain Current-Max (IDM) 120A
Part Status Obsolete
Dual Supply Voltage 55V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Avalanche Energy Rating (Eas) 29 mJ
Number of Terminations 3
Recovery Time 29 ns
Nominal Vgs 4 V
Termination Through Hole
Height 6.1mm
ECCN Code EAR99
Length 6.6mm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Width 2.3mm
Radiation Hardening No
REACH SVHC No SVHC
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Lead Free Lead Free
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.28mm
Lead Length 9.65mm
Number of Elements 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet