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  • IRFU6215PBF

IRFU6215PBF

IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFU6215PBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 653
  • Description: IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK (Kg)

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Details

Tags

Parameters
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 36ns
Factory Lead Time 12 Weeks
Drain to Source Voltage (Vdss) 150V
Mount Through Hole
Mounting Type Through Hole
Drive Voltage (Max Rds On,Min Rds On) 10V
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Vgs (Max) ±20V
Transistor Element Material SILICON
Fall Time (Typ) 37 ns
Operating Temperature -55°C~175°C TJ
Turn-Off Delay Time 53 ns
Packaging Tube
Published 2004
Continuous Drain Current (ID) -13A
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Threshold Voltage -4V
Number of Terminations 3
ECCN Code EAR99
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Resistance 580MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Pulsed Drain Current-Max (IDM) 44A
Additional Feature AVALANCHE RATED
Dual Supply Voltage -150V
Subcategory Other Transistors
Nominal Vgs -4 V
Voltage - Rated DC -150V
Height 6.22mm
Technology MOSFET (Metal Oxide)
Length 6.7056mm
Peak Reflow Temperature (Cel) 260
Width 2.3876mm
Current Rating -13A
Time@Peak Reflow Temperature-Max (s) 30
Radiation Hardening No
REACH SVHC No SVHC
Number of Elements 1
Power Dissipation-Max 110W Tc
RoHS Status ROHS3 Compliant
Element Configuration Single
Lead Free Contains Lead, Lead Free
Operating Mode ENHANCEMENT MODE
See Relate Datesheet