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  • IRFZ14PBF

IRFZ14PBF

Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFZ14PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 673
  • Description: Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 200mOhm
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 43W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 36W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 47 mJ
Recovery Time 140 ns
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet