Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRFZ14PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | 10A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 200mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 36W | 10 ns | 2V | 43W Tc | 140 ns | 10A | SWITCHING | 13 ns | SILICON | N-Channel | 200m Ω @ 6A, 10V | 4V @ 250μA | 300pF @ 25V | 11nC @ 10V | 50ns | 19 ns | 20V | 60V | 4 V | 10A Tc | 40A | 47 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
SIR680DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-N5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 16 ns | 104W Tc | 32.8A | 150°C | SWITCHING | 0.0029Ohm | 30 ns | SILICON | N-Channel | 2.9m Ω @ 20A, 10V | 3.4V @ 250μA | 5150pF @ 40V | 81nC @ 7.5V | 20V | 80V | 100A Tc | 200A | 80 mJ | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFD9120PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.2738mm | ROHS3 Compliant | Lead Free | -1A | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | 600mOhm | Through Hole | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | 1 | DRAIN | Single | 1.3W | 9.6 ns | -4V | 1.3W Ta | 200 ns | -1A | SWITCHING | 21 ns | SILICON | P-Channel | 600m Ω @ 600mA, 10V | 4V @ 250μA | 390pF @ 25V | 18nC @ 10V | 29ns | 29 ns | 20V | 100V | -4 V | 1A | 1A Ta | 8A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFU420PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | Lead Free | 2.4A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 3Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 42W | 8 ns | 4V | 2.5W Ta 42W Tc | 2.4A | SWITCHING | 33 ns | SILICON | N-Channel | 3 Ω @ 1.4A, 10V | 4V @ 250μA | 360pF @ 25V | 19nC @ 10V | 8.6ns | 16 ns | 20V | 500V | 2.4A Tc | 8A | 400 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFU310PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 3.6Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 7.9 ns | 4V | 3.6Ohm | TO-251AA | 2.5W Ta 25W Tc | 1.7A | 150°C | 21 ns | N-Channel | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 170pF @ 25V | 12nC @ 10V | 9.9ns | 11 ns | 20V | 400V | 1.7A Tc | 400V | 170pF | 10V | ±20V | 3.6 Ω | ||||||||||||||||||||||||||||||||||||||||||
SUD70090E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 2017 | ThunderFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 125W Tc | 50A | SWITCHING | 0.0089Ohm | 100V | SILICON | N-Channel | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 1950pF @ 50V | 50nC @ 10V | 50A Tc | 100V | 120A | 80 mJ | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
SIHH26N60E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 4V | 202W Tc | 25A | SWITCHING | 0.135Ohm | 600V | SILICON | N-Channel | 135m Ω @ 13A, 10V | 4V @ 250μA | 2815pF @ 100V | 116nC @ 10V | 25A Tc | 600V | 50A | 353 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
SIHG25N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | 145mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-247AC | Single | 19 ns | 250W Tc | 26A | SWITCHING | 57 ns | SILICON | N-Channel | 145m Ω @ 12A, 10V | 4V @ 250μA | 1980pF @ 100V | 86nC @ 10V | 36ns | 29 ns | 20V | 500V | 26A Tc | 50A | 273 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
SIHD5N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2012 | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.38mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | TO-252AA | DRAIN | Single | 104W | 12 ns | 3V | 104W Tc | 5.3A | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 500V | 5.3A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
SIHJ7N65E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | PowerPAK® SO-8 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 2V | 96W Tc | 7.9A | N-Channel | 598m Ω @ 3.5A, 10V | 4V @ 250μA | 820pF @ 100V | 44nC @ 10V | 7.9A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU210PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 1.5Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 2.5W | 8.2 ns | 4V | 2.5W Ta 25W Tc | 2.6A | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 1.6A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 17ns | 8.9 ns | 20V | 200V | 2.6A Tc | 95 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFR010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 250 | 40 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 25W | 10 ns | 25W Tc | 8.2A | SWITCHING | 0.2Ohm | 13 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 250pF @ 25V | 10nC @ 10V | 50ns | 19 ns | 20V | 60V | 8.2A Tc | 50V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFU224PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.38mm | 1.1Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 7 ns | 2.5W Ta 42W Tc | 3.8A | SWITCHING | 20 ns | SILICON | N-Channel | 1.1 Ω @ 2.3A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 13ns | 12 ns | 20V | 250V | 3.8A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
SIE810DF-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.15mm | ROHS3 Compliant | Lead Free | No | 10 | 10-PolarPAK® (L) | No SVHC | 800μm | 5.16mm | 20MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 10 | R-XDSO-N4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 125mW | 20 ns | 1.3V | 5.2W Ta 125W Tc | 60A | SWITCHING | 100 ns | SILICON | N-Channel | 1.4m Ω @ 25A, 10V | 2V @ 250μA | 13000pF @ 10V | 300nC @ 10V | 70ns | 10 ns | 12V | 20V | 45A | 60A Tc | 36 mJ | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||
IRFR9024PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | -8.8A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 280mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | 1 | 1 | Single | 42W | 13 ns | -4V | 280mOhm | D-Pak | 2.5W Ta 42W Tc | 200 ns | -8.8A | 15 ns | P-Channel | 280mOhm @ 5.3A, 10V | 4V @ 250μA | 570pF @ 25V | 19nC @ 10V | 68ns | 29 ns | 20V | -60V | 8.8A Tc | 60V | 570pF | 10V | ±20V | 280 mΩ | ||||||||||||||||||||||||||||||||||||||||
IRFBF30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 3.7Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | 4V | 3.7Ohm | TO-220AB | 125W Tc | 3.6A | 90 ns | N-Channel | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 1200pF @ 25V | 78nC @ 10V | 25ns | 30 ns | 20V | 4 V | 3.6A Tc | 900V | 1.2nF | 10V | ±20V | 3.7 Ω | ||||||||||||||||||||||||||||||||||||||||||
SIHF28N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | 123mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | ISOLATED | Single | 24 ns | 39W Tc | 28A | SWITCHING | 82 ns | SILICON | N-Channel | 123m Ω @ 14A, 10V | 4V @ 250μA | 2714pF @ 100V | 120nC @ 10V | 40ns | 39 ns | 20V | 600V | 28A Tc | 75A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
SI2336DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | unknown | 1.12mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 1.25W | 6 ns | 1V | 1.25W Ta 1.8W Tc | 5.2A | 150°C | SWITCHING | 0.042Ohm | 20 ns | SILICON | N-Channel | 42m Ω @ 3.8A, 4.5V | 1V @ 250μA | 560pF @ 15V | 15nC @ 8V | 10ns | 10 ns | 8V | 30V | 400 mV | 5.2A Tc | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
SIA817EDJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2013 | LITTLE FOOT® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | PowerPAK® SC-70-6 Dual | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Dual | 6.5W | 1.9W Ta 6.5W Tc | 4.5A | 23 ns | P-Channel | 65m Ω @ 3A, 10V | 1.3V @ 250μA | 600pF @ 15V | 23nC @ 10V | 20ns | 10 ns | 12V | -30V | Schottky Diode (Isolated) | 4.5A Tc | 30V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2399DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 22 ns | -600mV | 2.5W Tc | -6A | 150°C | SWITCHING | 28 ns | SILICON | P-Channel | 34m Ω @ 5.1A, 10V | 1.5V @ 250μA | 835pF @ 10V | 20nC @ 4.5V | 20ns | 9 ns | 12V | -20V | -600 mV | 6A | 6A Tc | 20V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
SI2338DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 1.3W | 3 ns | 2.5V | 1.3W Ta 2.5W Tc | 6A | SWITCHING | 0.028Ohm | 20 ns | SILICON | N-Channel | 28m Ω @ 5.5A, 10V | 2.5V @ 250μA | 424pF @ 15V | 13nC @ 10V | 11ns | 7 ns | 20V | 30V | 6A | 6A Tc | 25A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SI4485DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | 42mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 2.4W | 8 ns | 2.4W Ta 5W Tc | 5.9A | SWITCHING | 18 ns | SILICON | P-Channel | 42m Ω @ 5.9A, 10V | 2.5V @ 250μA | 590pF @ 15V | 21nC @ 10V | 10ns | 8 ns | 20V | -30V | -1.2 V | 6A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2018 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | MO-193AA | 5W Tc | 0.025Ohm | 12V | SILICON | P-Channel | 25m Ω @ 7.9A, 4.5V | 1V @ 250μA | 2000pF @ 6V | 28nC @ 4.5V | 8A | 8A Tc | 12V | 620 pF | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SI5471DC-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 1.1mm | 1.65mm | 20mOhm | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 9 ns | 2.5W Ta 6.3W Tc | -6A | SWITCHING | 78 ns | SILICON | P-Channel | 20m Ω @ 9.1A, 4.5V | 1.1V @ 250μA | 2945pF @ 10V | 96nC @ 10V | 8ns | 22 ns | 12V | -20V | 6A | 6A Tc | 20V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
SQJ860EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W | 10 ns | 48W Tc | 60A | 175°C | 0.006Ohm | 30 ns | SILICON | N-Channel | 6m Ω @ 10A, 10V | 2.5V @ 250μA | 2700pF @ 25V | 55nC @ 10V | 20V | 40V | 36A | 60A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-236-3, SC-59, SOT-23-3 | unknown | 1.12mm | 1.4mm | 3Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | FET General Purpose Powers | Not Qualified | 1 | Single | 350mW | 13 ns | 2V | 350mW Ta | 240mA | 150°C | SWITCHING | 18 ns | SILICON | N-Channel | 3 Ω @ 250mA, 10V | 2.5V @ 250μA | 21pF @ 5V | 0.6nC @ 4.5V | 20V | 68V | 0.24A | 240mA Ta | 60V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
SIHF30N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 125mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | TO-220AB | Single | 19 ns | 2V | 37W Tc | 29A | SWITCHING | 600V | 63 ns | SILICON | N-Channel | 125m Ω @ 15A, 10V | 4V @ 250μA | 2600pF @ 100V | 130nC @ 10V | 32ns | 36 ns | 20V | 29A Tc | 600V | 65A | 690 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
SI1013X-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.7mm | ROHS3 Compliant | Lead Free | No | 3 | LOW THRESHOLD | SC-89, SOT-490 | Unknown | 800μm | 950μm | 1.2Ohm | Surface Mount | 29.993795mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 250mW | 5 ns | -450mV | 250mW Ta | -400mA | SWITCHING | 35 ns | SILICON | P-Channel | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 1.5nC @ 4.5V | 9ns | 9 ns | 6V | -20V | 350mA Ta | 20V | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||
SI1031R-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.58mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOW THRESHOLD | SC-75A | No SVHC | 700μm | 760μm | 8Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 250mW | 55 ns | 900mV | 250mW Ta | 140mA | SWITCHING | 20V | 60 ns | SILICON | P-Channel | 8 Ω @ 150mA, 4.5V | 1.2V @ 250μA | 1.5nC @ 4.5V | 30ns | 30 ns | 6V | 140mA Ta | 20V | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
SQ1421EDH-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Digi-Reel® | 2015 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | 6 | 6-TSSOP, SC-88, SOT-363 | No SVHC | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | -2V | 3.3W Tc | 1.6A | 0.29Ohm | SILICON | P-Channel | 290m Ω @ 2A, 10V | 2.5V @ 250μA | 355pF @ 25V | 5.4nC @ 4.5V | 1.6A Tc | 60V | 35 pF | 4.5V 10V | ±20V |
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