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  • IRFZ24NPBF

IRFZ24NPBF

IRFZ24NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFZ24NPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 113
  • Description: IRFZ24NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 17A
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
Turn On Delay Time 4.9 ns
Factory Lead Time 12 Weeks
Contact Plating Tin
FET Type N-Channel
Mount Through Hole
Transistor Application SWITCHING
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 70m Ω @ 10A, 10V
Package / Case TO-220-3
Vgs(th) (Max) @ Id 4V @ 250μA
Number of Pins 3
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 34ns
Operating Temperature -55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) 10V
Packaging Tube
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Published 1999
Turn-Off Delay Time 19 ns
Series HEXFET®
Continuous Drain Current (ID) 17A
Part Status Active
Threshold Voltage 2V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
JEDEC-95 Code TO-220AB
Number of Terminations 3
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Termination Through Hole
Pulsed Drain Current-Max (IDM) 68A
ECCN Code EAR99
Dual Supply Voltage 55V
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Height 19.8mm
Resistance 70mOhm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
Additional Feature AVALANCHE RATED
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet