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  • IRFZ40PBF

IRFZ40PBF

Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFZ40PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 843
  • Description: Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 126W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 60V
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet