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IRFZ44ESPBF

MOSFET N-CH 60V 48A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFZ44ESPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 749
  • Description: MOSFET N-CH 60V 48A D2PAK (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On,Min Rds On) 10V
Surface Mount YES
Vgs (Max) ±20V
Transistor Element Material SILICON
Drain Current-Max (Abs) (ID) 48A
Operating Temperature -55°C~175°C TJ
Drain-source On Resistance-Max 0.023Ohm
Packaging Tube
Pulsed Drain Current-Max (IDM) 192A
DS Breakdown Voltage-Min 60V
Published 1997
Avalanche Energy Rating (Eas) 220 mJ
Series HEXFET®
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
See Relate Datesheet