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IRFZ44NSPBF
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 17.5m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 1470pF @ 25V |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Current - Continuous Drain (Id) @ 25°C | 49A Tc |
| Packaging | Tube |
| Published | 2001 |
| Series | HEXFET® |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| JESD-609 Code | e3 |
| Drain to Source Voltage (Vdss) | 55V |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| ECCN Code | EAR99 |
| Vgs (Max) | ±20V |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Drain Current-Max (Abs) (ID) | 49A |
| Subcategory | FET General Purpose Power |
| Drain-source On Resistance-Max | 0.0175Ohm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pulsed Drain Current-Max (IDM) | 160A |
| DS Breakdown Voltage-Min | 55V |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Avalanche Energy Rating (Eas) | 150 mJ |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| RoHS Status | ROHS3 Compliant |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.8W Ta 94W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet