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  • IRFZ44VZSPBF

IRFZ44VZSPBF

MOSFET N-CH 60V 57A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFZ44VZSPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 484
  • Description: MOSFET N-CH 60V 57A D2PAK (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 12mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 57A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 92W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 92W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 62ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 57A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Nominal Vgs 4 V
Height 4.572mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET®
See Relate Datesheet