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  • IRFZ46NLPBF

IRFZ46NLPBF

MOSFET N-CH 55V 53A TO-262


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFZ46NLPBF
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 511
  • Description: MOSFET N-CH 55V 53A TO-262 (Kg)

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Details

Tags

Parameters
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 53A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 107W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 120W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1696pF @ 25V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 76ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 53A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0165Ohm
Drain to Source Breakdown Voltage 55V
Factory Lead Time 12 Weeks
Mount Through Hole
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 152 mJ
Mounting Type Through Hole
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Number of Pins 3
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
See Relate Datesheet