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  • IRFZ46NPBF

IRFZ46NPBF

MOSFET N-CH 55V 53A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFZ46NPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 460
  • Description: MOSFET N-CH 55V 53A TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 53A
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Lead Pitch 2.54mm
Number of Elements 1
Voltage 55V
Power Dissipation-Max 107W Tc
Element Configuration Single
Current 40A
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1696pF @ 25V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 76ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 53A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 101 ns
Nominal Vgs 4 V
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet