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  • IRFZ48RPBF

IRFZ48RPBF

MOSFET N-CH 60V 50A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFZ48RPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 931
  • Description: MOSFET N-CH 60V 50A TO-220AB (Kg)

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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 290A
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Recovery Time 180 ns
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Height 9.01mm
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 10.41mm
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Width 4.7mm
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 50A
Radiation Hardening No
Pin Count 3
RoHS Status ROHS3 Compliant
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Lead Free Lead Free
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Case Connection DRAIN
Turn On Delay Time 8.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 250ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 250 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) 50A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
See Relate Datesheet