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IRG4BC30FDPBF

IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4BC30FDPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 553
  • Description: IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 42 ns
Transistor Application POWER CONTROL
Rise Time 26ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 230 ns
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.59V
Turn On Time 69 ns
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 620 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 124A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 31A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
See Relate Datesheet