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IRG4BC30FDSTRRP

IRG4BC30FDSTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4BC30FDSTRRP
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 442
  • Description: IRG4BC30FDSTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 69 ns
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 620 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet