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  • IRG4BC30SPBF

IRG4BC30SPBF

IRG4BC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4BC30SPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 688
  • Description: IRG4BC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 250
Current Rating 34A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Dual
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 540 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 34A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.4V
Turn On Time 40 ns
Test Condition 480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Turn Off Time-Nom (toff) 1550 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 68A
Td (on/off) @ 25°C 22ns/540ns
Switching Energy 260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 590ns
Height 15.24mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet