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  • IRG4BC40W-SPBF

IRG4BC40W-SPBF

IRG4BC40W-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4BC40W-SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 419
  • Description: IRG4BC40W-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 40A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Dual
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 27 ns
Transistor Application POWER CONTROL
Rise Time 23ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.05V
Turn On Time 48 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 294 ns
Gate Charge 98nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 27ns/100ns
Switching Energy 110μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 4.83mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
See Relate Datesheet