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IRG4IBC10UDPBF

IRG4IBC10UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4IBC10UDPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 612
  • Description: IRG4IBC10UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 56 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 345 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 27A
Td (on/off) @ 25°C 40ns/87ns
Switching Energy 140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 210ns
Height 16.129mm
Length 10.7442mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 25W
Current Rating 6.8A
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 6.8A
Reverse Recovery Time 28 ns
See Relate Datesheet