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IRG4IBC20UDPBF

IRG4IBC20UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4IBC20UDPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 931
  • Description: IRG4IBC20UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 34W
Current Rating 11.4A
Number of Elements 1
Element Configuration Single
Power Dissipation 34W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 11.4A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 55 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 39ns/93ns
Switching Energy 160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 170ns
Height 16.129mm
Length 10.7442mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet