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IRG4PC50F-EPBF

IRG4PC50F-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4PC50F-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 696
  • Description: IRG4PC50F-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 31 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 70A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 20V
Collector Emitter Saturation Voltage 1.45V
Turn On Time 52 ns
Test Condition 480V, 39A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Turn Off Time-Nom (toff) 620 ns
Gate Charge 190nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 31ns/240ns
Switching Energy 370μJ (on), 2.1mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 190ns
Height 20.701mm
Length 15.875mm
Width 5.3086mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet