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IRG4PC60UPBF

IRG4PC60UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4PC60UPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 929
  • Description: IRG4PC60UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 520W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 520W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 39 ns
Transistor Application POWER CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 200 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 75A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 78 ns
Test Condition 480V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Turn Off Time-Nom (toff) 460 ns
Gate Charge 310nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 39ns/200ns
Switching Energy 280μJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.701mm
Length 15.875mm
Width 5.3086mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet