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IRG4PH50S-EPBF

IRG4PH50S-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4PH50S-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 578
  • Description: IRG4PH50S-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 200W
Terminal Position SINGLE
Number of Elements 1
Element Configuration Dual
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 57A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 62 ns
Test Condition 960V, 33A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Turn Off Time-Nom (toff) 2170 ns
Gate Charge 167nC
Current - Collector Pulsed (Icm) 114A
Td (on/off) @ 25°C 32ns/845ns
Switching Energy 1.8mJ (on), 19.6mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet