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IRG7PH42U-EP

IRG7PH42U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG7PH42U-EP
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 272
  • Description: IRG7PH42U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 385W
Base Part Number IRG7PH42
Rise Time-Max 41ns
Element Configuration Single
Power Dissipation 385W
Input Type Standard
Turn On Delay Time 25 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 229 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 90A
Reverse Recovery Time 153 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench
Gate Charge 157nC
Td (on/off) @ 25°C 25ns/229ns
Switching Energy 2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 86ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet