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IRG7PH42UD-EP

IRG7PH42UD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG7PH42UD-EP
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 783
  • Description: IRG7PH42UD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 320W
Number of Elements 1
Rise Time-Max 41ns
Element Configuration Single
Power Dissipation 320W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 229 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
Reverse Recovery Time 153 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2V
Turn On Time 51 ns
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 444 ns
IGBT Type Trench
Gate Charge 157nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 25ns/229ns
Switching Energy 2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 86ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
See Relate Datesheet