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IRGB10B60KDPBF

IRGB10B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGB10B60KDPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 481
  • Description: IRGB10B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 156W
Current Rating 22A
Number of Elements 1
Element Configuration Single
Power Dissipation 156W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 22A
Reverse Recovery Time 90 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 50 ns
Test Condition 400V, 10A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Turn Off Time-Nom (toff) 276 ns
IGBT Type NPT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 30ns/230ns
Switching Energy 140μJ (on), 250μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Height 16.51mm
Length 10.6426mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet