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  • IRGB4059DPBF

IRGB4059DPBF

IRGB4059DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGB4059DPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 675
  • Description: IRGB4059DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Emitter Breakdown Voltage 2.2V
Voltage - Collector Emitter Breakdown (Max) 600V
Collector Emitter Saturation Voltage 1.75V
Turn On Time 35 ns
Test Condition 400V, 4A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 4A
Turn Off Time-Nom (toff) 120 ns
IGBT Type Trench
Gate Charge 9nC
Current - Collector Pulsed (Icm) 16A
Td (on/off) @ 25°C 25ns/65ns
Switching Energy 35μJ (on), 75μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 20ns
Height 9.02mm
Length 10.66mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 56W
Number of Elements 1
Element Configuration Single
Power Dissipation 56W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Rise Time 10ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 65 ns
Collector Emitter Voltage (VCEO) 2.05V
Max Collector Current 8A
Reverse Recovery Time 55 ns
JEDEC-95 Code TO-220AB
See Relate Datesheet