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IRGIB10B60KD1P

IGBT 600V 16A 44W TO220FP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGIB10B60KD1P
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 131
  • Description: IGBT 600V 16A 44W TO220FP (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 44W
Current Rating 16A
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 24ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 16A
Reverse Recovery Time 79 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 46 ns
Test Condition 400V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Turn Off Time-Nom (toff) 288 ns
IGBT Type NPT
Gate Charge 41nC
Current - Collector Pulsed (Icm) 32A
Td (on/off) @ 25°C 25ns/180ns
Switching Energy 156μJ (on), 165μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 87ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet