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IRGIB15B60KD1P

IRGIB15B60KD1P datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGIB15B60KD1P
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 229
  • Description: IRGIB15B60KD1P datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate-Emitter Thr Voltage-Max 5.5V
Height 16.12mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 52W
Current Rating 12A
Number of Elements 1
Element Configuration Single
Power Dissipation 52W
Case Connection ISOLATED
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 35ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 19A
Reverse Recovery Time 67 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 55 ns
Test Condition 400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 250 ns
IGBT Type NPT
Gate Charge 56nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 30ns/173ns
Switching Energy 127μJ (on), 334μJ (off)
Gate-Emitter Voltage-Max 20V
See Relate Datesheet