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IRGP4063D-EPBF

IRGP4063D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGP4063D-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 322
  • Description: IRGP4063D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 330W
Base Part Number IRGP4063D
Rise Time-Max 56ns
Element Configuration Single
Power Dissipation 330W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 96A
Reverse Recovery Time 115 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.05V
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
IGBT Type Trench
Gate Charge 140nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 60ns/145ns
Switching Energy 625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 46ns
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet