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IRGP4263-EPBF

IRGP4263-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGP4263-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 567
  • Description: IRGP4263-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Rise Time-Max 80ns
Element Configuration Single
Input Type Standard
Power - Max 300W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 90A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A
Gate Charge 150nC
Current - Collector Pulsed (Icm) 192A
Td (on/off) @ 25°C 70ns/140ns
Switching Energy 1.7mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.7V
Fall Time-Max (tf) 50ns
Height 20.7mm
Length 15.87mm
Width 5.13mm
See Relate Datesheet