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IRGP4266DPBF

IRGP4266DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGP4266DPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 654
  • Description: IRGP4266DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2007
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 455W
Rise Time-Max 90ns
Element Configuration Single
Input Type Standard
Power - Max 455W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 140A
Reverse Recovery Time 170 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Gate Charge 210nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 2.5mJ (on), 2.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.7V
Fall Time-Max (tf) 80ns
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet