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IRGP4650D-EPBF

IGBT 600V 76A 268W TO247AD


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGP4650D-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 825
  • Description: IGBT 600V 76A 268W TO247AD (Kg)

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 268W
Rise Time-Max 42ns
Element Configuration Single
Power Dissipation 134W
Input Type Standard
Power - Max 268W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 76A
Reverse Recovery Time 120 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Test Condition 400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 35A
Gate Charge 104nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 46ns/105ns
Switching Energy 390μJ (on), 632μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 54ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet