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IRGPS60B120KDP

IRGPS60B120KDP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGPS60B120KDP
  • Package: TO-274AA
  • Datasheet: PDF
  • Stock: 429
  • Description: IRGPS60B120KDP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 595W
Current Rating 105A
Number of Elements 1
Element Configuration Single
Power Dissipation 595W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 72 ns
Transistor Application MOTOR CONTROL
Rise Time 32ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 366 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 105A
Reverse Recovery Time 180 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 104 ns
Test Condition 600V, 15A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 60A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 105A
Turn Off Time-Nom (toff) 411 ns
IGBT Type NPT
Gate Charge 340nC
Current - Collector Pulsed (Icm) 240A
Switching Energy 3.21mJ (on), 4.78mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 58ns
Height 25.05mm
Length 16.1mm
Width 5.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet