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  • IRGR3B60KD2PBF

IRGR3B60KD2PBF

IRGR3B60KD2PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGR3B60KD2PBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 124
  • Description: IRGR3B60KD2PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 52W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGR3B60KD2PBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 22ns
Element Configuration Single
Power Dissipation 52W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 7.8A
Reverse Recovery Time 77 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Turn On Time 35 ns
Test Condition 400V, 3A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Turn Off Time-Nom (toff) 211 ns
IGBT Type NPT
Gate Charge 13nC
Current - Collector Pulsed (Icm) 15.6A
Td (on/off) @ 25°C 18ns/110ns
Switching Energy 62μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 105ns
Height 1.2446mm
Length 6.7056mm
Width 6.223mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet