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IRGS10B60KDTRRP

IRGS10B60KDTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGS10B60KDTRRP
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 992
  • Description: IRGS10B60KDTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 156W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGS10B60KDPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 156W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 22A
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 50 ns
Test Condition 400V, 10A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Turn Off Time-Nom (toff) 276 ns
IGBT Type NPT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 30ns/230ns
Switching Energy 140μJ (on), 250μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet