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IRGS14C40LTRLP

IRGS14C40LTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGS14C40LTRLP
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 201
  • Description: IRGS14C40LTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN OVER NICKEL
Additional Feature LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGS14C40LPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 4000ns
Element Configuration Single
Input Type Logic
Turn On Delay Time 1.35 μs
Power - Max 125W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 8.3 μs
Collector Emitter Voltage (VCEO) 1.75V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 430V
Collector Emitter Saturation Voltage 1.55V
Max Breakdown Voltage 430V
Turn On Time 3700 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 5V, 14A
Gate Charge 27nC
Td (on/off) @ 25°C 900ns/6μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet