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IRL1004PBF

IRL1004PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL1004PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 576
  • Description: IRL1004PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 12 Weeks
Rds On (Max) @ Id, Vgs 6.5m Ω @ 78A, 10V
Contact Plating Tin
Mount Through Hole
Vgs(th) (Max) @ Id 1V @ 250μA
Mounting Type Through Hole
Package / Case TO-220-3
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 130A Tc
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Rise Time 210ns
Packaging Tube
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Published 2004
Vgs (Max) ±16V
Series HEXFET®
Part Status Active
Fall Time (Typ) 14 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Turn-Off Delay Time 25 ns
Number of Terminations 3
Continuous Drain Current (ID) 130A
Threshold Voltage 1V
Termination Through Hole
JEDEC-95 Code TO-220AB
ECCN Code EAR99
Gate to Source Voltage (Vgs) 16V
Resistance 6.5mOhm
Drain to Source Breakdown Voltage 40V
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Pulsed Drain Current-Max (IDM) 520A
Subcategory FET General Purpose Power
Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 700 mJ
Voltage - Rated DC 40V
Nominal Vgs 1 V
Technology MOSFET (Metal Oxide)
Height 8.77mm
Current Rating 130A
Length 10.6426mm
Number of Elements 1
Width 4.82mm
Power Dissipation-Max 200W Tc
Radiation Hardening No
Element Configuration Single
REACH SVHC No SVHC
Operating Mode ENHANCEMENT MODE
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Power Dissipation 200W
Case Connection DRAIN
See Relate Datesheet