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  • IRL1004SPBF

IRL1004SPBF

MOSFET N-CH 40V 130A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL1004SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 295
  • Description: MOSFET N-CH 40V 130A D2PAK (Kg)

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Details

Tags

Parameters
Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 700 mJ
Recovery Time 120 ns
Mount Surface Mount
Nominal Vgs 1 V
Mounting Type Surface Mount
Height 4.83mm
Length 10.67mm
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Width 9.65mm
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Radiation Hardening No
REACH SVHC No SVHC
Packaging Tube
RoHS Status RoHS Compliant
Published 2004
Lead Free Lead Free
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 6.5MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 130A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 78A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 520A
See Relate Datesheet