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  • IRL1004STRLPBF

IRL1004STRLPBF

MOSFET N-CH 40V 130A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL1004STRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 652
  • Description: MOSFET N-CH 40V 130A D2PAK (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 78A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 130A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0065Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 520A
Avalanche Energy Rating (Eas) 700 mJ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 110A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Element Configuration Single
See Relate Datesheet