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  • IRL2703PBF

IRL2703PBF

MOSFET N-CH 30V 24A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL2703PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 645
  • Description: MOSFET N-CH 30V 24A TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 40MOhm
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 24A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 140ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 96A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 77 mJ
Recovery Time 97 ns
Nominal Vgs 1 V
Height 8.77mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet