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IRL2910PBF

IRL2910PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL2910PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 938
  • Description: IRL2910PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 29A, 10V
Factory Lead Time 12 Weeks
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Contact Plating Tin
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Mount Through Hole
Rise Time 100ns
Mounting Type Through Hole
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Package / Case TO-220-3
Fall Time (Typ) 55 ns
Number of Pins 3
Turn-Off Delay Time 49 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 55A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Operating Temperature -55°C~175°C TJ
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 48A
Packaging Tube
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Published 1998
Avalanche Energy Rating (Eas) 520 mJ
Recovery Time 350 ns
Series HEXFET®
Nominal Vgs 2 V
Height 8.77mm
Length 10.5156mm
Width 4.69mm
Part Status Active
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Contains Lead, Lead Free
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 55A
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet