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  • IRL3714ZSPBF

IRL3714ZSPBF

MOSFET N-CH 20V 36A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL3714ZSPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 910
  • Description: MOSFET N-CH 20V 36A D2PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 16mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 36A
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Power Dissipation 35W
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 550pF
Recovery Time 12 ns
Drain to Source Resistance 16mOhm
Rds On Max 16 mΩ
Nominal Vgs 2.1 V
Height 4.699mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet