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  • IRL3803VPBF

IRL3803VPBF

IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL3803VPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 866
  • Description: IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220 (Kg)

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Details

Tags

Parameters
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 140A
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 71A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 76nC @ 4.5V
Rise Time 180ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 470A
Avalanche Energy Rating (Eas) 400 mJ
Height 16.51mm
Length 10.6426mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet