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  • IRL520LPBF

IRL520LPBF

Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRL520LPBF
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 838
  • Description: Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2017
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 5.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 64ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 100V
Height 8.76mm
Length 10.54mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet