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  • IRL520NSTRLPBF

IRL520NSTRLPBF

MOSFET N-CH 100V 10A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL520NSTRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 767
  • Description: MOSFET N-CH 100V 10A D2PAK (Kg)

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Details

Tags

Parameters
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 180MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 85 mJ
Recovery Time 160 ns
Nominal Vgs 2 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
See Relate Datesheet