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IRL540NSTRRPBF

MOSFET N-CH 100V 36A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL540NSTRRPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 370
  • Description: MOSFET N-CH 100V 36A D2PAK (Kg)

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Details

Tags

Parameters
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Rise Time 81ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
See Relate Datesheet