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IRL60HS118

IRL60HS118 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL60HS118
  • Package: 6-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 898
  • Description: IRL60HS118 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Manufacturer Package Identifier PG-TSDSON-6
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 11.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 18.5A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 56A
Avalanche Energy Rating (Eas) 22 mJ
Max Junction Temperature (Tj) 175°C
Height 1mm
RoHS Status ROHS3 Compliant
See Relate Datesheet