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IRL7833SPBF

MOSFET N-CH 30V 150A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRL7833SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 527
  • Description: MOSFET N-CH 30V 150A D2PAK (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 3.8MOhm
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 150A
Number of Channels 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4170pF @ 15V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.9 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Recovery Time 63 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 2.3 V
Height 5.084mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet