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  • IRLB3813PBF

IRLB3813PBF

IRLB3813PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLB3813PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 955
  • Description: IRLB3813PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.95m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 8420pF @ 15V
Current - Continuous Drain (Id) @ 25°C 260A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 4.5V
Rise Time 170ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 260A
Threshold Voltage 1.9V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 120A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 1050A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 520 mJ
Recovery Time 36 ns
Nominal Vgs 1.9 V
Height 9.02mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 1.95MOhm
See Relate Datesheet