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  • IRLD014PBF

IRLD014PBF

MOSFET N-CH 60V 1.7A 4-DIP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRLD014PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 721
  • Description: MOSFET N-CH 60V 1.7A 4-DIP (Kg)

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Details

Tags

Parameters
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V
Rise Time 110ns
Factory Lead Time 8 Weeks
Drain to Source Voltage (Vdss) 60V
Mount Through Hole
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 110 ns
Mounting Type Through Hole
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Package / Case 4-DIP (0.300, 7.62mm)
Drain to Source Breakdown Voltage 60V
Input Capacitance 400pF
Recovery Time 130 ns
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
Number of Pins 4
Height 3.3782mm
Length 6.2738mm
Width 5.0038mm
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 200mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 1.7A
Number of Elements 1
Power Dissipation-Max 1.3W Ta
See Relate Datesheet