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  • IRLD024

IRLD024

Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRLD024
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 211
  • Description: Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP (Kg)

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Details

Tags

Parameters
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 2.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Power Dissipation 1.3W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 110ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Input Capacitance 870pF
Drain to Source Resistance 100mOhm
Rds On Max 100 mΩ
Height 3.37mm
Length 5mm
Width 6.29mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
See Relate Datesheet